WGC27550V1A
Thermally Enhanced GaN on SiC Amplifier
The WGC27550 is a 490 W (P4dB) GaN on SiC HEMT amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally enhanced package with earless flange.
Product Specifications
- Part Number
- WGC27550V1A
- Description
- Thermally Enhanced GaN on SiC Amplifier
- Min Frequency(MHz)
- 2496
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 490.0
- Gain(dB)
- 13.0
Features
- Optimized for Cellular Base Station Applications
- Typical pulsed CW performance, 2.960 GHz, 50 V, 10 μs pulse width, 10% duty cycle, combined outputs - Output power at P4dB = 490 W - Efficiency at P4dB = 58%
- 48 V Capable Operation
- 100% RF Tested
- RoHS* Compliant