WSGPC01-V1
Thermally Enhanced GaN on SiC Ampl
The WSGPC01 GaN on SiC HEMT designed for base station applications and optimized for 2.496 - 2.690 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 6 W (37.8 dBm) in an 4.0 x 4.5 mm DFN package.
Product Specifications
- Part Number
- WSGPC01-V1
- Description
- Thermally Enhanced GaN on SiC Ampl
- Min Frequency(MHz)
- 2496
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 6.0
- Gain(dB)
- 13.0
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Capable Operation
- 100% RF Tested
- RoHS* Compliant