RF Power Transistors - GaN

M/A-COM Technology Solutions offers a new family of Gallium Nitride (GaN) RF power transistors and pallets. This product family targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech's rich heritage of providing both standard and custom solutions to meet the most demanding customer needs. Benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than Silicon.

Key features of our GaN on Silicon Carbide (SiC) products include:

  • Offered as transistors or pallets
  • Utilize 0.5 micron HEMT process
  • Exhibit excellent RF performance: power, gain, gain flatness, efficiency, and ruggedness
  • Operate over wide bandwidths

View M/A-COM Tech's GaN Transistors
and Pallets brochure

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